u , o ne. 20 stern ave. springfield, new jersey 07081 u.s.a. telephone: (973) 376-2922 (212)227-6005 fax: (973) 376-8960 silicon npn power transistor MJF18004 description ? collector-base breakdown voltage- :v(br)cbo=1000v(min) ? high switching speed applications ? designed for use in 220v line-operated switchmode power supplies and electronic light ballasts absolute maximum ratings(ta=25'c) symbol vcbo vceo vebo ic icm ib ibm pd tj tstg parameter collector-base voltage collector-emitter voltage emitter-base voltage collector current-continuous collector current-peak base current base current-peak total power dissipation@tc=25c junction temperature storage temperature value 1000 450 g 5 10 2 4 40 150 -65~150 unit v v v a a a a w c "c thermal characteristics symbol rth j-c rth j-a parameter max thermal rresistance, junction to case 3.12 thermal resistance, junction to ambient 62.5 unit ?c/w "c/w *w 3 ! ??''?? pin 1.base 1 collector 3. emitter 1 2 3 to-220f package b - - c - -s- _ _..._ tr.t_77^< ??-}' u! < ; f .'?", -?--' ,-?, : " ' i .,.::':: : '::j -,'.'; ja . - - h "?",,,?:; t - r - ,..,,;, : k : . ' -d j ? - n * mm dim min max a 1495 15.05 b 10.00 10.10 c 4.40 4.60 d 0.75 0.80 f 3.10 3.30 h 3.70 3.90 j 0.50 0.70 k 13.4 13.6 l 1.10 1.30 n 5.00 5.20 q 2.70 2.90 r 2.20 2.40 s 2.65 2.85 u 6.40 6.60 nj semi-conductors reserves the right to change test conditions, parameter limits and package dimensions without notice. information furnished by nj semi-conductors is believed to be both accurate and reliable at the time of going to press. however, nj semi-conductors assumes no responsibility for any errors or omissions discovered in its use. nj semi-conductors encourages customers to verify that datasheets nre current before placing orders. quality semi-conductors
silicon npn power transistor MJF18004 electrical characteristics tj=25'c unless otherwise specified symbol vceo(sus) vce(sat)-1 vce(sat)-2 vce(sat)-3 vbe(sat)-1 vse(sat)-2 vee(sat)-3 ices iceo iebo hpe-1 hpe-2 hpe-3 hpe-4 fr cob parameter collector-emitter sustaining voltage collector-emitter saturation voltage collector-emitter saturation voltage collector-emitter saturation voltage base-emitter saturation voltage base-emitter saturation voltage base-emitter saturation voltage collector cutoff current collector cutoff current emitter cutoff current dc current gain dc current gain dc current gain dc current gain current-gain ? bandwidth product output capacitance conditions lc=0.1a;l=25mh lc=1 a;ib=0.1a tc=125'c ic=2a;ib=0.4a tc=125"c ic=2.5a;ib=0.5a lc= 1a; ib= 0.1a lc= 2a; ib= 0.4a lc=2.5a; ib=0.5a vces= ratedvces;veb= 0 tc=125'c voes= 800v tc=125-c vce= ratedvceo; ib= 0 veb= 9v; lc= 0 lc= 1a ; vce= 2.5v lc=1a;vce=5v lc=2a;vce=1v lc=10ma;vce=5v lc= 0.5a;vce= 10v;ftest=1.0mhz |e= 0; vcb= 10v; ftest=1.0mhz min 450 12 14 6 10 typ 13 45 max 0.5 0.6 0.45 0.8 0.75 1.1 1.25 1.3 0.05 0.5 0.01 0.1 0.1 0.1 36 unit v v v v v v v ma ma ma mhz pf switching times resistive load,duty cycled 10%,pulse width=20 u s ton ts tf turn-on time storage time turn-off time vcc=250v ,ic=2.5a lbi=lb2=0.5a 0.45 2 0.275 0.6 3 0.4 u s u s us
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